ARF466A Datasheet, PDF (3/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

TYPICAL PERFORMANCE CURVES
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
ARF466A_B
25
VGS=15 & 10V
20
8V
15
6V
10
5.5V
5V
5
4.5V
4V
0
0
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
0.40
0.35
0.9
0.30
0.25
0.7
0.20
0.15
0.10
0.05
0
10^-5
0.5
Note:
0.3
t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 7a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Junction
temp (°C)
Power
(watts)
Case temperature (°C)
RC MODEL
0.113 °C/W
0.0130 F
0.236 °C/W
0.147 F
Figure 7b, TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
2.0
13.5
27.1
40.7
65
Z_IN (Ω)
17.9 - j 11.2
1.1 - j 4.9
.25 - j 1.5
.15 - j 0.9
.31 + j 2.0
Z_OL (Ω)
30 - j 1.7
25.7 - j 9.8
18 - j 13.3
12 - j 12.6
6.2 - j 8.9
Z_IN - Gate shunted with 25Ω
I_DQ = 100mA
Z_OL - Conjugate of optimum load for 300W output at Vdd = 150V