ARF440 Datasheet, PDF (3/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET

ARF440/441
300
250
Performance of aTypical
Push-Pull Power Amplifier (2-Devices)
f = 13.56 MHz
V_DD = 50V
I_DQ = 400mA - 200mA / Side
200
150
100
50
0
0
0.5
1.0
16
TJ = -55°C
VDS = 30V
250µSEC. PULSE TEST
12
@ <0.5 % DUTY CYCLE
1.5
2.0
2.5
3.0
3.5
RF POWER IN (WATTS)
Figure 1, RF Power Out vs RF Power In
4.0
4.5
5.0
Figure 2, RF Power Out vs RF Power In
1.2
V_DS = V_GS
1.1
1.0
TJ = +25°C
8
TJ = +125°C
0.9
4
TJ = +125°C
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
10
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Transfer Characteristics
20
10
5
LOimpeitreadtioBny
Here(ON)
R DS
0.8
0.7
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
Figure 3, Threshold Voltage vs Temperature
1.2
1.1
1.0
1
0.9
.5
TC =+25°C
TJ =+150°C
0.8
.1
1
5 10
50 100 150
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Maximum DC Safe Operating Area
3,000
0.7
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 5, Breakdown Voltage vs Temperature
1,000
500
100
50
.01
Ciss
Coss
Crss
.05
.1
.5
1
5
10
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Capacitance vs. Drain-To-Source Voltage