APTC60AM18SC Datasheet, PDF (3/7 Pages) Advanced Power Technology – Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module

APTC60AM18SC
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
I_F(AV)
V_F
Maximum Average Forward Current
Diode Forward Voltage
50% duty cycle
I_F = 80A
Tc = 125°C
T_j = 25°C
T_j = 175°C
80
A
1.6 1.8 _V
2.0 2.4
Q_C Total Capacitive Charge
I_F = 80A, V_R = 300V
di/dt =2000A/µs
112
nC
Q Total Capacitance
f = 1MHz, V_R = 200V
f = 1MHz, V_R = 400V
520
pF
400
Thermal and package characteristics
Symbol Characteristic
Transistor
R_thJC Junction to Case
Series diode
Parallel diode
V_ISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
T_J Operating junction temperature range
T_STG
T_C
Torque
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
M6
For terminals
M5
Wt Package Weight
Min Typ Max Unit
0.15
0.46 ^°C/W
0.35
2500
V
-40
150
-40
125 °C
-40
100
3
2
5
3.5
N.m
280 g
Package outline
APT website – http://www.advancedpower.com
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