APT8030LVR Datasheet, PDF (3/4 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT8030LVR
50
VGS=5.5V, 6V, 7V, 10V & 15V
40
5V
30
20
4.5V
10
4V
0
0
100
200
300
400
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
100
TJ = -55°C
TJ = +25°C
80
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
60
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
40
TJ = +125°C
20
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
30
25
20
15
10
5
0
25
50
75
100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I_D = 0.5 I_D [Cont.]
V_GS = 10V
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
50
VGS=15V
VGS=10V
40
VGS=5.5V, 6V & 7V
5V
30
20
4.5V
10
4V
0
0
4
8
12
16
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
1.4
NORMALIZED TO
V_GS = 10V @ 0.5 I_D [Cont.]
1.3
1.2
VGS=10V
1.1
VGS=20V
1.0
0.9
0 10 20 30 40 50 60
I_D, DRAIN CURRENT (AMPERES)
FIGURE 5, R_DS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE