APT50M85B2VFR_04 Datasheet, PDF (3/4 Pages) Advanced Power Technology – POWER MOS V FREDFET

Typical Performance Curves
Junction
temp. (°C)
Power
(watts)
Case temperature. (°C)
RC MODEL
0.0846
0.116
0.0122F
0.249F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
120
100
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
80
60
TJ = -55°C
40
TJ = +25°C
20
TJ = +125°C
0
01 23 45 6 7
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
60
50
40
30
20
10
0
25
50
75
100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I_D = 28A
V_GS = 10V
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
160
VGS =15 &10 V
140
APT50M85B2VFR_LVFR
6.5V
120
6V
100
80
5.5V
60
5V
40
20
4.5V
4V
0
0
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
1.30
NORMALIZED TO
V_GS = 10V @ 28A
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
1.15
20 40 60 80 100 120
I_D, DRAIN CURRENT (AMPERES)
FIGURE 5, R_DS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE