APT50GN120B2 Datasheet, PDF (3/6 Pages) Advanced Power Technology – IGBT

TYPICAL PERFORMANCE CURVES
160
15V
140
12V
120
100
11V
80
10V
60
40
9V
20
8V
0
7V
0
2
4
6
8
10 12
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T_J = 25°C)
160
250µs PULSE
TEST<0.5 % DUTY
140
CYCLE
120
T_J = 125°C
100
T_J = 25°C
80
T_J = -55°C
60
40
20
0
0 2 4 6 8 10 12 14
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
4
T_J = 25°C.
250µs PULSE TEST
3.5
<0.5 % DUTY CYCLE
3
I_C = 100A
2.5
2
I_C = 50A
1.5
I_C = 25A
1.0
0.5
0
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
160
15V
140
APT50GN120B2(G)
120
12V
100
11V
80
60
10V
40
9V
20
8V
7V
0
0 2 4 6 8 10 12 14
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 125°C)
16
I_C = 50A
14 ^{TJ = 25°C}
V_CE = 240V
12
V_CE = 600V
10
8
V_CE = 960V
6
4
2
0
0
3
2.5
50 100 150 200 250 300 350
GATE CHARGE (nC)
FIGURE 4, Gate Charge
I_C = 100A
2
I_C = 50A
1.5
1
I_C = 25A
0.5
V_GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-50 -25 0 25 50 75 100 125
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
180
160
140
120
100
80
Lead Temperature
60
Limited
40
20
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature