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APT5024BLL Datasheet, PDF (3/5 Pages) Advanced Power Technology – POWER MOS 7 MOSFET
Typical Performance Curves
Junction
temp. ( ”C)
Power
(Watts)
Case temperature
RC MODEL
0.205
0.264
0.00544F
0.0981F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
60
VDS> ID (ON) x RDS (ON)MAX.
50
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
40
30
20
TJ = +125°C
10
TJ = +25°C
TJ = -55°C
0
0 1 2 3 4 5 6 7 8 9 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
25
20
15
10
5
0
25
50
75
100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
ID = 11A
VGS = 10V
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
60
VGS=15 &10V
50
8V
APT5024BLL_SLL
40
7.5V
30
7V
20
6.5V
10
6V
5.5V
0
0
5
10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.7
NORMALIZED TO
1.6
VGS = 10V @ 11A
1.5
1.4
1.3
VGS=10V
1.2
1.1
VGS=20V
1.0
0.9
0
1.15
10 20 30 40 50 60
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE