APT5010B2VFR Datasheet, PDF (3/4 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT5010B2VFR
100
VGS=7V, 8V, 10V & 15V _6V
80
60
5.5V
40
5V
20
4.5V
4V
0
0
50
100 150 200 250
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
100
TJ = -55°C
TJ = +25°C
80
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
60
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
40
20
TJ = +125°C
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
50
40
30
20
10
0
25
50
75
100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I_D = 0.5 I_D [Cont.]
V_GS = 10V
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
100
VGS=15V
80
VGS=7V, 8V & 10V
60
6V
5.5V
40
5V
20
4.5V
4V
0
0
2
4
6
8 10 12
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
1.5
NORMALIZED TO
V_GS = 10V @ 0.5 I_D [Cont.]
1.4
1.3
1.2
VGS=10V
1.1
VGS=20V
1.0
0.9
0 20 40 60 80 100 120
I_D, DRAIN CURRENT (AMPERES)
FIGURE 5, R_DS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE