APT5010B2LL_04 Datasheet, PDF (3/5 Pages) Advanced Power Technology – POWER MOS 7 MOSFET

Typical Performance Curves
Junction
temp. (°C)
RC MODEL
0.0131
0.00266F
Power
(watts)
0.0789
0.0811
0.00584F
0.0796F
Case temperature. (°C)
0.230
0.460F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100
90
80
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
70
60
50
40
30
20
TJ = +125°C
10
TJ = +25°C
TJ = -55°C
0
0 1 2 3 4 5 6 7 8 9 10
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
50
40
30
20
10
0
25
50
75
100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I_D = 23A
V_GS = 10V
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
APT5010B2LL_LLL
120
15 &10V
8V
100
7.5V
80
7V
60
6.5V
40
6V
20
5.5V
0
0
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.2
1.15
1.1
1.05
1.0
NORMALIZED TO
V_GS = 10V @ 23A
VGS=10V
VGS=20V
0.95
0.9
0
1.15
20
40
60
80
I_D, DRAIN CURRENT (AMPERES)
FIGURE 5, R_DS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE