APT466FL Datasheet, PDF (3/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE RF POWER MOSFETs

TYPICAL PERFORMANCE CURVES
1.10
1.05
1.00
0.95
ARF466FL
25
VGS=15 & 10V
20
8V
15
6V
0.90
0.85
0.80
0.75
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
0.35
10
5.5V
5V
5
4.5V
4V
0
0
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
0.30
D = 0.9
0.25
0.7
0.20
0.5
0.15
Note:
0.10
0.05
0
10^-5
0.3
t1
0.1
SINGLE PULSE
0.05
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 7a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Junction
temp. (°C)
RC MODEL
0.108
0.00872
Power
(watts)
0.146
0.0650
0.0460
0.767
Case temperature. (°C)
Figure 7b, TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
Z_IN (Ω)
Z_OL (Ω)
2.0
18 - j 11
13.5
1.3 - j 5
27.1
.40 - j 2.6
40.7
.20 - j 1.6
65
.11 + j 0.6
30 - j 1.7
25.7 - j 9.8
18 - j 13.3
12 - j 12.6
6.2 - j 8.9
Zin - Gate shunted with 25Ω
I_DQ = 100mA
Z_OL - Conjugate of optimum load for 300 W output at Vdd = 150V