APT30M19JVFR Datasheet, PDF (3/4 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

APT30M19JVFR
360
VGS=8V, 9V, 10V & 15V
300
7V
240
6.5V
180
6V
120
5.5V
60
5V
4.5V
0
0 25 50 75 100 125 150
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
360
TJ = -55°C
300
TJ = +25°C
TJ = +125°C
240
180
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
120
60
TJ = +125°C
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
150
125
100
75
50
25
0
25
50
75
100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I_D = 0.5 I_D [Cont.]
V_GS = 10V
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
360
VGS=15V
8V
10V
300
7V
9V
240
6.5V
180
6V
120
5.5V
60
5V
4.5V
0
0
1
2
3
4
5
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
1.15
NORMALIZED TO
V_GS = 10V @ 0.5 I_D [Cont.]
1.10
VGS=10V
1.05
1.00
VGS=20V
0.95
0.90
0
50 100 150 200 250 300
I_D, DRAIN CURRENT (AMPERES)
FIGURE 5, R_DS(ON) vs DRAIN CURRENT
1.20
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE