APT26GU30K Datasheet, PDF (3/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
60
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
50
40
T_C = -55°C
30
20
T_C = 25°C
10
T_C = 125°C
0
0
1
2
3
4
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V_GE = 15V)
100
250µs PULSE TEST
<0.5 % DUTY CYCLE
80
60
TJ = -55°C
40
TJ = 25°C
TJ = 125°C
20
0
0
2
4
6
8
10
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
3
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
2.5
I_C = 26A
2
I_C = 13A
1.5
I_C = 6.5A
1
0.5
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
60
VGE = 10V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
50
T_C=-55°C
40
T_C=25°C
30
20
APT26GU30K_SA
T_C=125°C
10
0
0
1
2
3
4
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (V_GE = 10V)
16
I_C = 13A
14 ^{TJ = 25°C}
V_CE = 60V
12
V_CE = 150V
10
8
V_CE = 240V
6
4
2
0
0 5 10 15 20 25 30 35 40
GATE CHARGE (nC)
FIGURE 4, Gate Charge
2.5
I_C = 26A
2.0
I_C = 13A
1.5
I_C = 6.5A
1.0
0.5
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-50 -25 0 25 50 75 100 125
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
70
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature