APT25GT120BR Datasheet, PDF (3/6 Pages) Advanced Power Technology – Thunderbolt IGBT

TYPICAL PERFORMANCE CURVES
80
V_GE = 15V
70
60
T_J = 25°C
50
T_J = 125°C
40
T_J = -55°C
30
20
10
0
0
2
4
6
8
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T_J = 25°C)
80
250µs PULSE
TEST<0.5 % DUTY
70
CYCLE
T_J = -55°C
60
50
40
30
T_J = 25°C
20
T_J = 125°C
10
00
2
4
6
8 10 12 14
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
6
I_C = 50A
T_J = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
5
4
I_C = 25A
3
2
I_C = 12.5A
1
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
APT25GT120BR(G)
100
15V
13V
80
12V
60
11V
40
10V
20
9V
8V
00
5
7V
10
15
20
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 125°C)
16
I_C = 25A
14 ^{TJ = 25°C}
V_CE = 240V
V_CE = 600V
12
10
V_CE = 960V
8
6
4
2
0
0 20 40 60 80 100 120 140 160 180 200
GATE CHARGE (nC)
FIGURE 4, Gate Charge
6
5
I_C = 50A
4
I_C = 25A
3
I_C = 12.5A
2
1
V_GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
0 25 50 75 100 125 150
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
80
70
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature