APT20GT60BRDQ1 Datasheet, PDF (3/9 Pages) Advanced Power Technology – Thunderbolt IGBT

TYPICAL PERFORMANCE CURVES
80
70
T_J = -55°C
60
50
T_J = 25°C
40
T_J = 125°C
30
20
10
0
0
1
2
3
4
5
6
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T_J = 25°C)
80
250µs PULSE
TEST<0.5 % DUTY
70
CYCLE
60
T_J = -55°C
50
40
30
T_J = 25°C
20
10
T_J = 125°C
00
2
4
6
8
10 12
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
4.0
T_J = 25°C.
250µs PULSE TEST
3.5
<0.5 % DUTY CYCLE
I_C = 40A
3.0
2.5
I_C = 20A
2.0
1.5
I_C = 10A
1.0
0.5
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
APT20GT60BRDQ1(G)
120
15V
13V
100
80
11V
10V
60
9V
40
8V
20
7V
6V
0
0
5
10
15
20
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 125°C)
16
I_C = 20A
14 ^{TJ = 25°C}
V_CE = 120V
12
V_CE = 300V
10
8
V_CE = 480V
6
4
2
0
0
4.0
20 40 60 80 100 120
GATE CHARGE (nC)
FIGURE 4, Gate Charge
3.5
3.0
I_C = 40A
2.5
I_C = 20A
2.0
1.5
I_C = 10A
1.0
0.5
V_GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
25
50
75
100
125
150
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature