APT20GN60B Datasheet, PDF (3/6 Pages) Advanced Power Technology – IGBT

TYPICAL PERFORMANCE CURVES
40
V_GE = 15V
35
T_J = 25°C
30
25
T_J = 125°C
20
15
T_J = 175°C
10
T_J = -55°C
5
0
0 0.5 1.0 1.5 2.0 2.5 3.0
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T_J = 25°C)
60
250µs PULSE
TEST<0.5 % DUTY
CYCLE
50
T_J = -55°C
40
T_J = 25°C
T_J = 125°C
30
T_J = 175°C
20
10
0
0
5
10
15
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
3.0
T_J = 25°C.
250µs PULSE TEST
2.5
I_C = 40A
<0.5 % DUTY CYCLE
2.0
I_C = 20A
1.5
1.0
I_C = 10A
0.5
06
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.40
1.30
1.20
1.10
1.00
0.90
0.80
-50 -25 0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
90
15V
80
14V
APT20GN60B(G)
70
13V
60
12V
50
40
11V
30
10V
20
9V
10
8V
0
0
5
10 15 20 25 30
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 125°C)
16
I_C = 20A
14 ^{TJ = 25°C}
V_CE = 120V
12
V_CE = 300V
10
8
V_CE = 480V
6
4
2
0
0
3.0
20 40 60 80 100 120 140
GATE CHARGE (nC)
FIGURE 4, Gate Charge
2.5
I_C = 40A
2.0
1.5
I_C = 20A
1.0
I_C = 10A
0.5
V_GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0 _{0 25 50 75 100 125 150 175}
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150 175
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature