APT15GT60BRDQ1 Datasheet, PDF (3/9 Pages) Advanced Power Technology – Thunderbolt IGBT

TYPICAL PERFORMANCE CURVES
45
V_GE = 15V
40
T_J = -55°C
35
30
T_J = 25°C
25
T_J = 125°C
20
15
10
5
0
0
1
2
3
4
5
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T_J = 25°C)
45
250µs PULSE
TEST<0.5 % DUTY
40
CYCLE
35
T_J = -55°C
30
25
20
15
T_J = 25°C
10
T_J = 125°C
5
0
0
2
4
6
8
10 12
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
4.0
3.5
I_C = 30A
T_J = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
3.0
2.5
I_C = 15A
2.0
1.5
I_C = 7.5A
1.0
0.5
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
APT15GT60BRDQ1(G)
100
15V
90
80
13V
70
60
10V
50
9V
40
8V
30
7V
20
6V
10
0
0
5
10
15
20
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 125°C)
16
I_C = 15A
14 ^{TJ = 25°C}
V_CE = 120V
12
V_CE = 300V
10
8
6
V_CE = 480V
4
2
0
0 10 20 30 40 50 60 70 80
GATE CHARGE (nC)
FIGURE 4, Gate Charge
3.5
3.0
I_C = 30A
2.5
I_C = 15A
2.0
1.5
I_C = 7.5A
1.0
0.5
V_GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
25
50
75
100
125
150
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature