APT15GP90K Datasheet, PDF (3/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
60
V_GE = 15V
50
T_J = 25°C
40
30
T_J = 125°C
20
10
0
0
1
2
3
4
5
6
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T_J = 25°C)
100
250µs PULSE
90
TEST<0.5 % DUTY
CYCLE
80
70
60
50
40
30
T_J = -55°C
20
T_J = 25°C
T_J = 125°C
10
0
0 2 4 6 8 10 12 14
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
6
T_J = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
5
4
I_C = 30A
I_C = 15A
3
I_C = 7.5A
2
1
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
50
V_GE = 10V
40
APT15GP90K(G)
30
T_J = 25°C
20
T_J = 125°C
10
0
0
1
2
3
4
5
6
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 125°C)
16
I_C = 15A
14 ^{TJ = 25°C}
V_CE = 180V
12
V_CE = 450V
10
8
V_CE = 720V
6
4
2
0
0
4.0
3.5
3.0
10 20 30 40 50 60 70
GATE CHARGE (nC)
FIGURE 4, Gate Charge
I_C = 30A
I_C = 15A
2.5
2.0
I_C = 7.5A
1.5
1.0
0.5
V_GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-50 -25 0
25 50 75 100 125
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature