APL1001P Datasheet, PDF (3/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APL1001P
20
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
15
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
10
5
TJ = +125°C
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
20
15
10
5
0
25
50
75
100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I_D = 0.5 I_D [Cont.]
V_GS = 10V
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
100
OPERATION HERE
LIMITED BY R_DS (ON)
100µS
10
1mS
10mS
1
100mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
DC
.1
1
10
100
1000
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
1.30
1.20
1.10
NORMALIZED TO
V_GS = 10V @ 0.5 I_D [Cont.]
VGS=10V
1.00
0.90
VGS=20V
0.80
0
10
20
30
40
I_D, DRAIN CURRENT (AMPERES)
FIGURE 5, R_DS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
20,000
10,000
Ciss
5,000
1,000
500
Coss
Crss
100
.01
.1
1
10
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE