ARF446 Datasheet, PDF (2/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE

DYNAMIC CHARACTERISTICS
Symbol Characteristic
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V_GS = 0V
V_DS = 300V
f = 1 MHz
V_GS = 15V
V_DD = 0.5 V_DSS
I_D = I_D[Cont.] @ 25°C
R_G = 1.6Ω
ARF446/447
MIN TYP MAX UNIT
1500 1800
70 130 pF
27
50
7
15
5
10
ns
23
40
12
25
FUNCTIONAL CHARACTERISTICS
Symbol Characteristic
G_{PS Common Source Amplifier Power Gain}
η
Drain Efficiency
ψ
Electrical Ruggedness VSWR 20:1
Test Conditions
f = 27.12 MHz
V_GS = 0V V_DD = 300V
P_out = 250W
MIN TYP MAX UNIT
20
dB
80
%
No Degradation in Output Power
G_{PS Common Source Amplifier Power Gain}
η
Drain Efficiency
ψ
Electrical Ruggedness VSWR 20:1
f = 40.68 MHz
V_GS = 0V V_DD = 250V
P_out = 250W
13
15
dB
70
75
%
No Degradation in Output Power
1 _{Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%}
APT Reserves the right to change, without notice, the specifications and information contained herein.
30
3000
Class C
Ciss
25
V_DD = 250V
P_out = 250W
1000
20
500
Coss
15
100
Crss
10
50
5
0
10
20 30
40
50
60 65
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
16
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
12
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
10
1
5 10
50 100 300
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
30
OPERATION HERE
LIMITED BY R_DS (ON)
10
5
10µS
100µS
1mS
8
4
TJ = +125°C
TJ = -55°C
TJ = +25°C
0
0
2
4
6
8
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
1
10mS
.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
100mS
DC
.1
1
5 10
50 100
1000
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area