ARF1500 Datasheet, PDF (2/4 Pages) Advanced Power Technology – RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

DYNAMIC CHARACTERISTICS
Symbol Characteristic
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V_GS = 0V
V_DS = 150V
f = 1 MHz
V_GS = 15V
V_DD = 250
I_D = 60A @ 25°C
R_G = 1.6 Ω
ARF1500
MIN TYP MAX UNIT
5150 6030
500 650
pF
215 225
7.5
6.0
ns
20
10
FUNCTIONAL CHARACTERISTICS
Symbol Characteristic
G_{PS Common Source Amplifier Power Gain}
η
Drain Efficiency
ψ
Electrical Ruggedness VSWR 10:1
Test Conditions
f = 27.12 MHz
V_GS = 0V V_DD = 125V
P_out = 750W
MIN TYP MAX UNIT
17
19
dB
70
75
%
No Degradation in Output Power
1 _{Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%.}
APT Reserves the right to change, without notice, the specifications and information contained herein.
Per transistor section unless otherwise specified.
20,000
10,000
Ciss
5000
1000
500
Coss
Crss
100
.1
1
10
100 200
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1, Typical Capacitance vs. Drain-to-Source Voltage
60
VDS> ID(ON) x RDS_(ON) MAX.
250µSEC. PULSE TEST
50
@ <0.5 % DUTY CYCLE
TJ = -55°C
40
30
20
10
TJ = +25°C
TJ = +125°C
0
0 2 4 6 8 10 12 14
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Transfer Characteristics
240
100
50
DATA FOR BOTH SIDES
IN PARALLEL
OPERATION HERE
LIMITED BY R_DS (ON)
100us
10
5
TC =+25°C
TJ =+200°C
SINGLE PULSE
1
1
5 10
50 100
500
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Maximum Safe Operating Area
1ms
10ms
100ms