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APTM100UM65S-ALN Datasheet, PDF (2/6 Pages) Advanced Power Technology – Single switch Series & parallel diodes MOSFET Power Module
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APTM100UM65S-AlN
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS Zero Gate Voltage Drain Current
RDS(on)
VGS(th)
IGSS
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS= 1000V Tj = 25°C
400 µA
VGS = 0V,VDS= 800V Tj = 125°C
2 mA
VGS = 10V, ID = 72.5A
65 78 mΩ
VGS = VDS, ID = 20mA
3
5V
VGS = ±30 V, VDS = 0V
±400 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on)
Tr
Td(off)
Tf
Eon
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy X
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy X
Eoff Turn-off Switching Energy
X Eon includes diode reverse recovery
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 145A
VGS = 15V
VBus = 500V
ID = 145A
RG = 0.75Ω
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 145A, RG = 0.75Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 145A, RG = 0.75Ω
Min Typ Max Unit
28.5
5.08
nF
0.9
1068
136
nC
692
18
14
ns
140
55
4.8
mJ
2.9
8
mJ
3.9
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage
200
V
IRM Maximum Reverse Leakage Current
VR=200V
Tj = 25°C
Tj = 125°C
350
µA
600
IF(AV) Maximum Average Forward Current
50% duty cycle Tc = 80°C
120
A
VF Diode Forward Voltage
IF = 120A
IF = 240A
1.1 1.15
1.4
V
IF = 120A
Tj = 125°C
0.9
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Tj = 25°C
31
IF = 120A
VR = 133V
Tj = 125°C
60
ns
di/dt = 400A/µs Tj = 25°C
120
nC
Tj = 125°C
500
APT website – http://www.advancedpower.com
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