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| APTGT50DDA120T3 Datasheet, PDF (2/5 Pages) Advanced Power Technology – Dual Boost chopper Trench IGBT Power Module | |||
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APTGT50DDA120T3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
ICES Zero Gate Voltage Collector Current
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
IGES Gate â Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, IC = 2mA
1200
V
VGE = 0V, VCE = 1200V
5 mA
VGE =15V
IC = 50A
Tj = 25°C 1.4 1.7 2.1 V
Tj = 125°C
2.0
VGE = VCE , IC = 2mA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Crss
Td(on)
Tr
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy X
Turn-off Switching Energy Y
X Eon includes diode reverse recovery
Y In accordance with JEDEC standard JESD24-1
Test Conditions
VGE = 0V,VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 50A
RG = 18â¦
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 50A
RG = 18â¦
Min Typ Max Unit
3600
pF
160
90
30
ns
420
70
90
50
ns
520
90
5
mJ
5.5
Diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM Maximum Reverse Leakage Current
IF(AV) Maximum Average Forward Current
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
Min Typ Max Unit
1200
V
VR=1200V
50% duty cycle
IF = 60A
IF = 120A
IF = 60A
Tj = 25°C
Tj = 125°C
Tc = 70°C
Tj = 125°C
250
µA
500
60
A
2 2.5
2.3
V
1.8
Tj = 25°C
400
IF = 60A
VR = 800V
Tj = 125°C
470
ns
di/dt =200A/µs Tj = 25°C
1200
nC
Tj = 125°C
4000
APT website â http://www.advancedpower.com
2-5
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