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| APTGT150DU170 Datasheet, PDF (2/5 Pages) Advanced Power Technology – Dual common source Trench + Field Stop IGBT Power Module | |||
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APTGT150DU170
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate â Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 1700V
350 µA
VGE = 15V
IC = 150A
Tj = 25°C
Tj = 125°C
2.0 2.4 V
2.4
VGE = VCE , IC = 3mA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
600 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
13.5
0.55
nF
0.44
Inductive Switching (25°C)
370
VGE = 15V
VBus = 900V
IC = 150A
40
ns
650
RG = 4.7â¦
180
Inductive Switching (125°C)
400
VGE = 15V
VBus = 900V
IC = 150A
RG = 4.7â¦
50
ns
800
300
48
mJ
47
Diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM Maximum Reverse Leakage Current
IF(A V)
VF
Maximum Average Forward Current
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
Min Typ Max Unit
1700
V
VR=1700V
50% duty cycle
Tj = 25°C
Tj = 125°C
Tc = 80°C
350
µA
600
150
A
IF = 150A
IF = 150A
VR = 900V
di/dt =1600A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
1.8 2.2 V
1.9
385
ns
490
40
µC
64
APT website â http://www.advancedpower.com
2-5
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