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APTGT100DA170D1 Datasheet, PDF (2/3 Pages) Advanced Power Technology – Boost chopper Trench IGBT Power Module
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APTGT100DA170D1
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 4mA
1700
ICES Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1700V
V
3 mA
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
VGE = 15V
IC = 100A
Tj = 25°C
Tj = 125°C
2.0 2.4 V
2.4
VGE = VCE , IC = 4 mA
5.2 5.8 6.4 V
VGE = 20V, VCE = 0V
200 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Cres
Td(on)
Tr
Td(off)
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eoff Turn Off Energy
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 25V
f = 1MHz
8.5
nF
0.3
Inductive Switching (25°C)
250
VGE = ±15V
VBus = 900V
IC = 100A
RG = 15Ω
100
850
ns
120
Inductive Switching (125°C)
300
VGE = ±15V
VBus = 900V
IC = 100A
100
ns
1000
RG = 15Ω
200
32
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VF Diode Forward Voltage
Er Reverse Recovery Energy
IF = 100A
VGE = 0V
IF = 100A
VR = 900V
di/dt =900A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
1.8 2.2 V
1.9
12
mJ
25
Qrr Reverse Recovery Charge
IF = 100A
Tj = 25°C
25
VR = 900V
µC
di/dt =900A/µs Tj = 125°C
43
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case
VISOL
TJ
TSTG
TC
Torque
Wt
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
For terminals
To Heatsink
Package Weight
IGBT
Diode
M5
M6
Min Typ Max Unit
0.18 °C/W
0.3
3500
V
-40
150
-40
125 °C
-40
125
2
3.5 N.m
3
5
180 g
APT website – http://www.advancedpower.com
2-3
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