 English |
|
|
|
|
|
|
|
| APTGT100A60T Datasheet, PDF (2/5 Pages) Advanced Power Technology – Phase leg Trench + Field Stop IGBT Power Module | |||
| |||
| ◁ |
APTGT100A60T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate â Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 600V
250 µA
VGE =15V
IC = 100A
Tj = 25°C
Tj = 150°C
1.5 1.9 V
1.7
VGE = VCE , IC = 1.5 mA
5.0 5.8 6.5 V
VGE = 20V, VCE = 0V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn on Energy
Eoff Turn off Energy
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 100A
RG = 10â¦
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 100A
RG = 10â¦
Min Typ Max Unit
6100
390
pF
190
115
45
225
ns
55
130
50
ns
300
70
1.8
mJ
3.5
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage
600
V
IRM Maximum Reverse Leakage Current
VR=600V
Tj = 25°C
Tj = 150°C
250
500
µA
IF(AV) Maximum Average Forward Current
50% duty cycle Tc = 80°C
100
A
VF Diode Forward Voltage
IF = 100A
VGE = 0V
Tj = 25°C
Tj = 150°C
1.6 2
V
1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Tj = 25°C
125
IF = 100A
VR = 300V
di/dt =2000A/µs
Tj = 150°C
Tj = 25°C
220
4.7
ns
µC
Tj = 150°C
9.9
APT website â http://www.advancedpower.com
2-5
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese