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APTGT100A120D1 Datasheet, PDF (2/3 Pages) Advanced Power Technology – Phase leg Trench IGBT Power Module
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APTGT100A120D1
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
ICES Zero Gate Voltage Collector Current
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min
VGE = 0V, IC = 3mA
1200
VGE = 0V, VCE = 1200V
VGE = 15V
IC = 100A
Tj = 25°C 1.4
Tj = 125°C
VGE = VCE , IC = 3mA
5.0
VGE = 20V, VCE = 0V
Typ Max Unit
V
3 mA
1.7 2.1 V
2.0
5.8 6.5 V
300 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
7
0.4
nF
0.33
Inductive Switching (25°C)
280
VGE = ±15V
VBus = 600V
IC = 100A
RG = 7.5Ω
90
550
ns
130
Inductive Switching (125°C)
300
VGE = ±15V
VBus = 600V
IC = 100A
100
ns
650
RG = 7.5Ω
180
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VF Diode Forward Voltage
Erec Reverse Recovery Energy
IF = 100A
VGE = 0V
IF = 100A
VR = 600V
di/dt =900A/µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
1.6 2.1 V
1.6
8.5
mJ
Qrr Reverse Recovery Charge
IF = 100A
Tj = 25°C
10
VR = 600V
µC
di/dt =900A/µs Tj = 125°C
18
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case
VISOL
TJ
TSTG
TC
Torque
Wt
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
For terminals
To Heatsink
Package Weight
IGBT
Diode
M5
M6
Min Typ Max Unit
0.24 °C/W
0.40
2500
V
-40
150
-40
125 °C
-40
125
2
3.5
N.m
3
5
180 g
APT website – http://www.advancedpower.com
2-3
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