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| APTGF75DSK120T Datasheet, PDF (2/5 Pages) Advanced Power Technology – Dual Buck chopper NPT IGBT Power Module | |||
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APTGF75DSK120T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 25°C
Tj = 125°C
0.1 2 mA
4
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 75A
Tj = 25°C
Tj = 125°C
3.2 3.7 V
3.9
VGE(th) Gate Threshold Voltage
IGES Gate â Emitter Leakage Current
VGE = VCE, IC = 2.5 mA
4.5
VGE = ±20V, VCE = 0V
6.5 V
±500 nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on)
Tr
Td(off)
Tf
Eon
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
5.1
0.7
nF
0.4
Inductive Switching (25°C)
120
VGE = 15V
VBus = 600V
IC = 75A
RG = 7.5â¦
50
ns
310
20
Inductive Switching (125°C)
130
VGE = 15V
VBus = 600V
IC = 75A
RG = 7.5â¦
60
ns
360
30
9
mJ
4
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage
1200
V
IRM Maximum Reverse Leakage Current
VR=1200V
Tj = 25°C
Tj = 125°C
250 µA
500
IF(AV) Maximum Average Forward Current
VF Diode Forward Voltage
50% duty cycle
IF = 100A
IF = 200A
IF = 100A
Tc = 70°C
Tj = 125°C
100
A
2.0 2.5
2.3
V
1.8
trr Reverse Recovery Time
IF = 100A
Tj = 25°C
420
VR = 800V
ns
di/dt =200A/µs Tj = 125°C
580
Qrr Reverse Recovery Charge
IF = 100A
VR = 800V
Tj = 25°C
1.2
µC
di/dt =200A/µs Tj = 125°C
5.3
APT website â http://www.advancedpower.com
2-5
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