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| APTGF50H60T3G Datasheet, PDF (2/6 Pages) Advanced Power Technology – Full - Bridge NPT IGBT Power Module | |||
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APTGF50H60T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate â Emitter Leakage Current
VGE = 0V
VCE = 600V
Tj = 25°C
Tj = 125°C
VGE =15V
IC = 50A
Tj = 25°C 1.7
Tj = 125°C
VGE = VCE , IC = 1mA
4
VGE = 20V, VCE = 0V
1 500 µA
1
mA
2.0 2.45 V
2.2
6V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Qg Total gate Charge
Qge Gate â Emitter Charge
Qgc Gate â Collector Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on)
Tr
Td(off)
Tf
Eon
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGE = 15V
VBus = 300V
IC = 50A
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7â¦
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7â¦
Min Typ Max Unit
2200
323
pF
200
166
20
nC
100
40
9
120
ns
12
42
10
130
21
ns
0.5
1
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
VR=600V
IF = 30A
IF = 60A
IF = 30A
600
V
Tj = 25°C
Tj = 125°C
250
µA
500
Tc = 70°C
30
A
Tj = 125°C
1.6 1.8
1.9
V
1.4
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Tj = 25°C
85
IF = 30A
VR = 400V
Tj = 125°C
160
ns
di/dt =200A/µs Tj = 25°C
130
nC
Tj = 125°C
700
APT website â http://www.advancedpower.com
2-6
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