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APTGF350A60 Datasheet, PDF (2/6 Pages) Advanced Power Technology – Phase leg NPT IGBT Power Module
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APTGF350A60
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 200µA
600
ICES Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 25°C
Tj = 125°C
V
200
µA
4000
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 360A
Tj = 25°C
Tj = 125°C
2.0 2.5 V
2.2
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
VGE = VCE, IC = 4mA
3
VGE = ±20V, VCE = 0V
5V
±300 nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Qg Total gate Charge
Qge Gate – Emitter Charge
Qgc Gate – Collector Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy u
Eoff Turn-off Switching Energy v
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy u
Eoff Turn-off Switching Energy v
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
17.2
1.88
nF
1.6
VGS = 15V
VBus = 300V
IC = 360A
1320
1160
nC
800
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 360A
RG = 1.25W
26
25
ns
150
30
13.5
mJ
11.5
Inductive Switching (125°C)
26
VGE = 15V
VBus = 400V
IC = 360A
RG = 1.25W
25
ns
170
40
17.2
mJ
14
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IF(AV) Maximum Average Forward Current
VF Diode Forward Voltage
50% duty cycle
IF = 400A
IF = 800A
IF = 400A
Tc = 80°C
Tj = 125°C
400
A
1.6 1.8
1.9
V
1.4
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 400A
Tj = 25°C
180
VR = 400V
ns
di/dt =800A/µs Tj = 125°C
220
IF = 400A
Tj = 25°C
1560
VR = 400V
nC
di/dt =800A/µs Tj = 125°C
5800
u Eon includes diode reverse recovery
v In accordance with JEDEC standard JESD24-1
APT website – http://www.advancedpower.com
2-6
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