APTGF30X60BTP2 Datasheet, PDF (2/4 Pages) Advanced Power Technology – Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module

APTGF30X60RTP2
APTGF30X60BTP2
IGBT & Diode Brake (only for APTGF30X60BTP2) Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V_CES Collector - Emitter Breakdown Voltage
600
V
I_C Continuous Collector Current
T_C = 25°C
25
T_C = 80°C
15
A
I_CM Pulsed Collector Current
V_GE Gate – Emitter Voltage
P_D Maximum Power Dissipation
T_C = 25°C
37
±20
V
T_C = 25°C
100
W
I_F DC Forward Current
T_C = 80°C
10
A
IGBT & Diode Inverter Absolute maximum ratings
Symbol
Parameter
V_CES Collector - Emitter Breakdown Voltage
I_C Continuous Collector Current
I_CM
V_GE
P_D
SCSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Short circuit Safe Operating Area
I_F DC Forward Current
I_FSM Surge Forward Current
t_p = 1ms
Max ratings
Unit
600
V
T_C = 25°C
50
T_C = 80°C
30
A
T_C = 25°C
75
±20
V
T_C = 25°C
180
W
T_j = 125°C 120A @ 360V
T_C = 80°C
30
A
T_C = 80°C
60
2. Electrical Characteristics
Diodes Rectifier Electrical Characteristics
Symbol Characteristic
I_R Reverse Current
V_F Forward Voltage
R_thJC Junction to Case
Test Conditions
Min Typ Max Unit
V_R = 1600V
I_F = 30A
I_F = 30A
T_j = 150°C
T_j = 25°C
T_j = 150°C
2
mA
1.3 1.5 _V
1.1 1.15
1 °C/W
IGBT Brake & Diode (only for APTGF30X60BTP2) Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
I_CES Zero Gate Voltage Collector Current
V_CE(on) Collector Emitter on Voltage
V_GE(th)
I_GES
C_ies
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
V_F Forward Voltage
R_thJC Junction to Case
V_GE = 0V
V_CE = 600V
T_j = 25°C
T_j = 125°C
0.5 500 µA
0.8
mA
V_GE = 15V
I_C = 15A
T_j = 25°C
T_j = 125°C
1.95 2.45
V
2.2
V_GE = V_CE , I_C = 0.4mA
4.5 5.5 6.5 V
V_GE = 20V, V_CE = 0V
300 nA
V_GE = 0V, V_CE = 25V
f = 1MHz
800
pF
V_GE = 0V
I_F = 30A
T_j = 25°C
T_j = 125°C
1.25 1.7
V
1.2
IGBT
Diode
1.3 _°C/W
1.2
APT website – http://www.advancedpower.com
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