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APTGF180DU60T Datasheet, PDF (2/6 Pages) Advanced Power Technology – Dual common source NPT IGBT Power Module
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APTGF180DU60T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 150µA
600
ICES Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 25°C
Tj = 125°C
V
150
µA
3000
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 180A
Tj = 25°C
Tj = 125°C
2.0 2.5
V
2.2
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
VGE = VCE, IC = 2mA
3
VGE = 20 V, VCE = 0V
5V
±200 nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Qg Total gate Charge
Qge Gate – Emitter Charge
Qgc Gate – Collector Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy u
Eoff Turn-off Switching Energy v
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy u
Eoff Turn-off Switching Energy v
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
8.6
0.94
nF
0.8
VGS = 15V
VBus = 300V
IC = 180A
660
580
nC
400
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 180A
RG = 2.5 W
26
25
ns
150
30
6.74
mJ
5.74
Inductive Switching (125°C)
26
VGE = 15V
VBus = 400V
IC = 180A
RG = 2.5 W
25
ns
170
40
8.6
mJ
7
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IF(AV) Maximum Average Forward Current
VF Diode Forward Voltage
50% duty cycle
IF = 120A
IF = 240A
IF = 120A
Tc = 70°C
Tj = 125°C
120
A
1.6 1.8
1.9
V
1.4
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 120A
Tj = 25°C
85
VR = 400V
ns
di/dt =800A/µs Tj = 125°C
160
IF = 120A
Tj = 25°C
520
VR = 400V
nC
di/dt =800A/µs Tj = 125°C
2800
u Eon includes diode reverse recovery
v In accordance with JEDEC standard JESD24-1
APT website – http://www.advancedpower.com
2-6
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