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APTGF165DA60D1 Datasheet, PDF (2/3 Pages) Advanced Power Technology – Boost Chopper NPT IGBT Power Module
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APTGF165DA60D1
Electrical Characteristics
Symbol Characteristic
All ratings @ Tj = 25°C unless otherwise specified
Test Conditions
Min Typ Max Unit
BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 5 mA
600
V
ICES Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 25°C
Tj = 125°C
1 500 µA
1
mA
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
VGE = 15V
IC = 200A
Tj = 25°C
Tj = 125°C
2.0 2.5 V
2.2
VGE = VCE , IC = 4 mA
4.5
6.5 V
VGE = 20V, VCE = 0V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Cres Reverse Transfer Capacitance
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eoff Turn off energy
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 25V
f = 1MHz
9000
pF
800
Inductive Switching (25°C)
165
VGE = ±15V
VBus = 300V
IC = 200A
RG = 1.5Ω
40
250
ns
35
Inductive Switching (125°C)
180
VGE = ±15V
VBus = 300V
IC = 200A
50
ns
285
RG = 1.5Ω
40
6.3
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VF Diode Forward Voltage
Er Reverse Recovery Energy
IF = 200A
VGE = 0V
IF = 200A
VR = 300V
di/dt =900A/µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
1.25 1.6 V
1.2
4.1
mJ
Qrr Reverse Recovery Charge
IF = 200A
Tj = 25°C
12
VR = 300V
µC
di/dt =900A/µs Tj = 125°C
19
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case
VISOL
TJ
TSTG
TC
Torque
Wt
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
For terminals
To Heatsink
Package Weight
IGBT
Diode
M5
M6
Min Typ Max Unit
0.17 °C/W
0.29
2500
V
-40
150
-40
125 °C
-40
125
2
3.5 N.m
3
5
180 g
APT website – http://www.advancedpower.com
2-3
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