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APT8GT60KR Datasheet, PDF (2/4 Pages) Advanced Power Technology – The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs.
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
MIN
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.66VCES
IC = IC2
Resistive Switching (25°C)
VGE = 15V
VCC = 0.66VCES
IC = IC2
RG = 50Ω
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 50Ω
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 50Ω
TJ = +25°C
VCE = 20V, IC = IC2
1.2
TYP
355
44
23
32
15
3
7
11
40
90
11
5
100
70
0.05
0.22
0.27
11
5
80
45
0.20
4.3
APT8GT60KR
MAX UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
THERMAL CHARACTERISTICS
Symbol Characteristic
RΘJC
RΘJA
Torque
Junction to Case
Junction to Ambient
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
MIN TYP MAX UNIT
1.8
°C/W
80
10
lb•in
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 IC = IC2, VCC = 50V, RGE = 25Ω, L = 500µH, Tj = 25°C
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.