APT5531BFLL Datasheet, PDF (2/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET

DYNAMIC CHARACTERISTICS
APT5531BFLL - SFLL
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
C_{iss Input Capacitance}
V_GS = 0V
1811
C_oss
C_rss
Output Capacitance
Reverse Transfer Capacitance
V_DS = 25V
f = 1 MHz
365
pF
26
Q_g
Total Gate Charge ³
Q_{gs Gate-Source Charge}
Q_{gd Gate-Drain ("Miller ") Charge}
V_GS = 10V
V_DD = 275V
I_D = 19A @ 25°C
42
12
nC
25
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_on
E_off
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Turn-on Switching Energy ⁶
Turn-off Switching Energy
RESISTIVE SWITCHING
11
V_GS = 15V
V_DD = 275V
I_D = 19A @ 25°C
8
ns
27
R_G = 0.6Ω
7
INDUCTIVE SWITCHING @ 25°C
V_DD = 367V, V_GS = 15V
156
I_D = 19A, R_G = 5Ω
76
µJ
INDUCTIVE SWITCHING @ 125°C
283
V_DD = 367V V_GS = 15V
I_D = 19A, R_G = 5Ω
84
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
I_S
Continuous Source Current (Body Diode)
I_{SM Pulsed Source Current} 1 _{(Body Diode)}
19 _Amps
76
V_{SD Diode Forward Voltage} 2 _{(VGS = 0V, IS = -19A)}
dv_/dt
Peak Diode Recovery ^dv/_dt ⁵
t_rr
Reverse Recovery Time
(I_S = -19A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
1.3 Volts
15 V/ns
250
ns
400
Reverse Recovery Charge
Q_rr
(I_S = -19A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
1.9
µC
6
Peak Recovery Current
I_RRM
(I_S = -19A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
15
Amps
26
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_θJC
R_θJA
Junction to Case
Junction to Ambient
0.47
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T_j = +25°C, L = 5.32mH, R_G = 25Ω, Peak I_L = 19A
5 ^dv/_dt numbers reflect the limitations of the test circuit rather than the
device itself. I_S ≤ -I_D19A ^di/_dt ≤ 700A/µs V_R ≤ V_DSS T_J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.50
0.40
0.30
0.20
0.10
0
10^-5
0.9
0.7
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION