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| APT50M85B2VR_04 Datasheet, PDF (2/4 Pages) Advanced Power Technology – POWER MOS V MOSFET | |||
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DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 250V
ID = 56A @ 25°C
VGS = 15V
VDD = 250V
ID = 56A @ 25°C
RG = 0.6â¦
APT50M85B2VR_LVR
MIN TYP MAX UNIT
10500
1290
pF
600
420
50
nC
200
16
18
ns
60
6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -56A)
t rr
Reverse Recovery Time (IS = -56A, dlS/dt = 100A/µs)
Q rr Reverse Recovery Charge (IS = -56A, dlS/dt = 100A/µs)
dv/dt Peak Diode Recovery dv/dt 5
MIN TYP MAX UNIT
56
Amps
224
1.3 Volts
680
ns
17
µC
8
V/ns
THERMAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJA
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.20
°C/W
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.91mH, RG = 25â¦, Peak IL = 56A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ⤠-ID56A di/dt ⤠700A/µs VR ⤠500V TJ ⤠150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
0.20
0.9
0.15
0.7
0.10
0.05
0
10-5
Note:
0.5
t1
0.3
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
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