APT50M80B2VR_03 Datasheet, PDF (2/4 Pages) Advanced Power Technology – POWER MOS V

DYNAMIC CHARACTERISTICS
Symbol
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 250V
I_D = 58A @ 25°C
V_GS = 15V
V_DD = 250V
I_D = 58A @ 25°C
R_G = 0.6Ω
APT50M80B2VR_LVR
MIN TYP MAX UNIT
8797
1286
pF
562
423
41
nC
214
14
25
ns
64
23
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I_S
I_SM
V_SD
t _rr
Q _rr
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current ¹ (Body Diode)
Diode Forward Voltage ² (V_GS = 0V, I_S = -58A)
Reverse Recovery Time (I_S = -58A, dl_S/dt = 100A/µs)
Reverse Recovery Charge (I_S = -58A, dl_S/dt = 100A/µs)
MIN TYP MAX UNIT
58
Amps
232
1.3 Volts
680
ns
17.0
µC
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_θJC
R_θJA
Junction to Case
Junction to Ambient
0.20
°C/W
40
1 _{Repetitive Rating: Pulse width limited by maximum junction}
temperature.
2 _{Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%}
3 _{See MIL-STD-750 Method 3471}
4 _{Starting Tj = +25°C, L = 1.78mH, RG = 25Ω, Peak IL = 58A}
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
0.20
0.9
0.15
0.7
0.10
0.05
0
10^-5
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION