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APT50M80B2VFR_03 Datasheet, PDF (2/4 Pages) Advanced Power Technology – POWER MOS V
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg
Total Gate Charge 3
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller ") Charge
td(on) Turn-on Delay Time
tr
Rise Time
td(off) Turn-off Delay Time
tf
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 250V
ID = 58A @ 25°C
VGS = 15V
VDD = 250V
ID = 58A @ 25°C
RG = 0.6Ω
APT50M80B2VFR_LVFR
MIN TYP MAX UNIT
8797
1286
pF
562
423
41
nC
214
14
25
ns
64
23
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -58A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -58A, di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -58A, di/dt = 100A/µs)
Peak Recovery Current
(IS = -58A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN TYP MAX UNIT
58
Amps
232
1.3 Volts
5
V/ns
270
ns
540
2.7
µC
5.9
16
Amps
22.5
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.20
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 1.78mH, RG = 25Ω, Peak IL = 58A
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -58A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
0.20
0.9
0.15
0.7
0.10
0.05
0
10-5
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION