APT50M60L2VR Datasheet, PDF (2/2 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

DYNAMIC CHARACTERISTICS
APT50M60L2VR
Symbol Characteristic
Test Conditions
MIN TYP MAX
C_{iss Input Capacitance}
C_{oss Output Capacitance}
C_{rss Reverse Transfer Capacitance}
V_GS = 0V
V_DS = 25V
f = 1 MHz
12000
1600
610
Q_g
Total Gate Charge ³
V_GS = 10V
500
Q_gs
L ^Qgd
A t_d(on)
IC t_r
N _td(off)
CH ^t_f
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V_DD = 0.5 V_DSS
80
I_D = 0.5 I_D[Cont.] @ 25°C
210
V_GS = 15V
20
V_DD = 0.5 V_DSS
25
I_D = I_D[Cont.] @ 25°C
80
R_G = 0.6W
8
ED ^{TE TION SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS}
C ^A _Symbol
AN ^{RM I}S
V ^O I_SM
AD INF ^VSD
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current ¹ (Body Diode)
Diode Forward Voltage ² (V_GS = 0V, I_S = -I_D[Cont.])
MIN TYP MAX
77
308
1.3
t _rr
Reverse Recovery Time (I_S = -I_D[Cont.], dl_S/dt = 100A/µs)
680
Q _rr Reverse Recovery Charge (I_S = -I_D[Cont.], dl_S/dt = 100A/µs)
17.0
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_qJC
R_qJA
Junction to Case
Junction to Ambient
0.15
40
°C/W
1 _{Repetitive Rating: Pulse width limited by maximum junction}
3 _{See MIL-STD-750 Method 3471}
temperature.
2 _{Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%}
4 _{Starting Tj = +25°C, L = 1.08mH, RG = 25W, Peak IL = 77A}
APT Reserves the right to change, without notice, the specifications and information contained herein.
TO-264 MAX^TM(L2) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234
5,256,583 4,748,103 5,283,202 5,231,474
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
5,019,522 5,262,336
5,434,095 5,528,058