APT50M50L2LL Datasheet, PDF (2/2 Pages) Advanced Power Technology – Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

DYNAMIC CHARACTERISTICS
APT50M50L2LL
Symbol Characteristic
Test Conditions
MIN TYP MAX
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_GS = 0V
V_DS = 25V
f = 1 MHz
9840
2030
150
Q_g
Total Gate Charge ³
V_GS = 10V
245
Q_gs
L ^Q_gd
A _td(on)
IC _tr
HN ^td(off)
C _tf
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V_DD = 0.5 V_DSS
I_D = I_D[Cont.] @ 25°C
V_GS = 15V
V_DD = 0.5 V_DSS
I_D = I_D[Cont.] @ 25°C
R_G = 0.6W
E ^TE TION _{SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS}
NC _{MA Symbol}
DVA ^{OR IS}
F _ISM
A _{IN VSD}
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current ¹ (Body Diode)
Diode Forward Voltage ² (V_GS = 0V, I_S = -I_D[Cont.])
65
110
25
16
51
9
MIN TYP MAX
87
348
1.3
t _rr
Reverse Recovery Time (I_S = -I_D[Cont.], dl_S/dt = 100A/µs)
760
Q _rr Reverse Recovery Charge (I_S = -I_D[Cont.], dl_S/dt = 100A/µs)
24
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
THERMAL CHARACTERISTICS
Symbol
R_qJC
R_qJA
Characteristic
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.14
40
°C/W
1 _{Repetitive Rating: Pulse width limited by maximum junction}
temperature.
2 _{Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%}
3 _{See MIL-STD-750 Method 3471}
4 _{Starting Tj = +25°C, L = 0.85mH, RG = 25W, Peak IL = 87A}
APT Reserves the right to change, without notice, the specifications and information contained herein.
TO-264 MAX^TM(L2) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434
5,256,583 4,748,103 5,283,202
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
5,182,234 5,019,522
5,231,474 5,434,095
5,262,336
5,528,058