APT50M50L2FLL Datasheet, PDF (2/2 Pages) Advanced Power Technology – Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

DYNAMIC CHARACTERISTICS
APT50M50L2FLL
Symbol Characteristic
Test Conditions
MIN TYP MAX
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_GS = 0V
V_DS = 25V
f = 1 MHz
9840
2030
153
Q_g
Q_gs
L _Qgd
ICA ^td(on)
t_r
HN t_d(off)
C _tf
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V_GS = 10V
V_DD = 0.5 V_DSS
I_D = I_D [Cont.] @ 25°C
V_GS = 15V
V_DD = 0.5 V_DSS
I_D = I_D [Cont.] @ 25°C
R_G =0.6W
TE _{ION SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS}
E T _Symbol
NC _{MA IS}
VA ^{R ISM}
D ^{O V}SD
A _INF dv_/dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current ¹ (Body Diode)
Diode Forward Voltage ² (V_GS = 0V, I_S = -I_D [Cont.])
Peak Diode Recovery ^dv/_dt ⁵
246
65
112
24
22
56
8
MIN TYP MAX
89
356
1.3
15
Reverse Recovery Time
t_rr
(I_S = -I_D [Cont.], ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
300
600
Reverse Recovery Charge
Q_rr
(I_S = -I_D [Cont.], ^di/_dt = 100A/µs)
T_j = 25°C
2.6
T_j = 125°C
10
I_RRM
Peak Recovery Current
(I_S = -I_D [Cont.], ^di/_dt = 100A/µs)
T_j = 25°C
17
T_j = 125°C
34
UNIT
pF
nC
ns
UNIT
Amps
Volts
V/ns
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_qJC
R_qJA
Junction to Case
Junction to Ambient
0.14
40
°C/W
1 _{Repetitive Rating: Pulse width limited by maximum junction}
temperature.
2 _{Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%}
3 _{See MIL-STD-750 Method 3471}
4 _{Starting Tj = +25°C, L = 0.81mH, RG = 25W, Peak IL = 89A}
5 dv_{/dt numbers reflect the limitations of the test circuit rather than the}
device itself. I_S £ -I_D[Cont.] ^di/_dt £ 700A/µs V_R £ V_DSS T_J £ 150°C
APT Reserves the right to change,
without notice, the specifications
and information contained herein.
TO-264 MAX^TM(L2) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434
5,256,583 4,748,103 5,283,202
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
5,182,234 5,019,522
5,231,474 5,434,095
5,262,336
5,528,058