APT50M50JVFR Datasheet, PDF (2/4 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

DYNAMIC CHARACTERISTICS
Symbol
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t _d(on)
t_r
t _d(off)
t_f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 0.5 V_DSS
I_D = I_D [Cont.] @ 25°C
V_GS = 15V
V_DD = 0.5 V_DSS
I_D = I_D [Cont.] @ 25°C
R_G = 0.6Ω
APT50M50JVFR
MIN TYP MAX UNIT
16300 19600
2210 3090 pF
850 1275
675 1000
95 140 nC
320 480
25
50
20
40
ns
85 125
12
24
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
I_S
I_SM
V_SD
dv_/dt
t_rr
Q_rr
I_RRM
Continuous Source Current (Body Diode)
Pulsed Source Current ¹ (Body Diode)
Diode Forward Voltage ² (V_GS = 0V, I_S = -I_D [Cont.])
Peak Diode Recovery ^dv/_dt ⁵
Reverse Recovery Time
(I_S = -I_D [Cont.], ^di/_dt = 100A/µs)
Reverse Recovery Charge
(I_S = -I_D [Cont.], ^di/_dt = 100A/µs)
Peak Recovery Current
(I_S = -I_D [Cont.], ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
MIN TYP MAX UNIT
77
Amps
308
1.3 Volts
5
V/ns
300
ns
600
2.2
µC
9.0
16
Amps
33
THERMAL / PACKAGE CHARACTERISTICS
Symbol
R_θJC
R_θJA
V_Isolation
Torque
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
MIN
2500
TYP
MAX
0.18
40
13
UNIT
°C/W
Volts
lb•in
1 _{Repetitive Rating: Pulse width limited by maximum junction}
3 _{See MIL-STD-750 Method 3471}
temperature.
2 _{Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%}
4 _{Starting Tj = +25°C, L = 1.21mH, RG = 25Ω, Peak IL = 77A}
5 _{IS ≤ -ID [Cont.],} di_{/dt = 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 2.0Ω,}
V_R = 200V
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.2
0.1
D=0.5
0.05
0.2
0.1
0.01
0.005
0.05
0.02
0.01
Note:
t1
0.001
SINGLE PULSE
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
0.0005
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION