APT50GN60BDQ2 Datasheet, PDF (2/9 Pages) Advanced Power Technology – IGBT

DYNAMIC CHARACTERISTICS
Symbol
C_ies
C_oes
C_res
V_GEP
Q_g
Q_ge
Q_gc
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge ³
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
SSOA ^{Switching Safe Operating Area}
SCSOA Short Circuit Safe Operating Area
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy ⁴
Turn-on Switching Energy (Diode) ⁵
Turn-off Switching Energy ⁶
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy ^{4 4}
Turn-on Switching Energy (Diode) ⁵⁵
Turn-off Switching Energy ⁶⁶
Test Conditions
MIN
Capacitance
V_GE = 0V, V_CE = 25V
f = 1 MHz
Gate Charge
V_GE = 15V
V_CE = 300V
I_C = 50A
T_J = 175°C, R_G = 4.3Ω ⁷, V_GE =
15V, L = 100µH,V_CE = 600V
150
V_CC = 360V, V_GE = 15V,
T_J = 150°C, R_G = 4.3Ω ⁷
6
Inductive Switching (25°C)
V_CC = 400V
V_GE = 15V
I_C = 50A
R_G = 4.3Ω ⁷
T_J = +25°C
Inductive Switching (125°C)
V_CC = 400V
V_GE = 15V
I_C = 50A
R_G = 4.3Ω ⁷
T_J = +125°C
APT50GN60BDQ2(G)
TYP
3200
125
100
9.0
325
25
175
MAX
UNIT
pF
V
nC
A
µs
20
25
ns
230
100
1185
1275
µJ
1565
20
25
ns
260
140
1205
1850
µJ
2125
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R_θJC
R_θJC
W_T
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
MIN TYP MAX UNIT
.41
°C/W
.67
5.9
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I_ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E_on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 E_on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E_off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R_G is external gate resistance, not including R_G(int) nor gate driver impedance. (MIC4452)
8 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.