APT50GF120JRD Datasheet, PDF (2/4 Pages) Advanced Power Technology – The Fast IGBT™ is a new generation of high voltage power IGBTs.

DYNAMIC CHARACTERISTICS (IGBT)
Symbol Characteristic
C_ies
C_oes
C_res
Q_g
Q_ge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_ts
gfe
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁴
Turn-off Switching Energy
Total Switching Losses ⁴
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses ⁴
Forward Transconductance
Test Conditions
MIN
Capacitance
V_GE = 0V
V_CE = 25V
f = 1 MHz
Gate Charge
V_GE = 15V
V_CC = 0.5V_CES
I_C = I_C2
Resistive Switching (25°C)
V_GE = 15V
V_CC = 0.8V_CES
I_C = I_C2
R_G = 5Ω
Inductive Switching (150°C)
V_CLAMP(Peak) = 0.66V_CES
V_GE = 15V
I_C = I_C2
R_G = 5Ω
T_J = +150°C
Inductive Switching (25°C)
V_CLAMP(Peak) = 0.66V_CES
V_GE = 15V
I_C = I_C2
R_G = 5Ω
T_J = +25°C
V_CE = 20V, I_C = I_C2
6
APT50GF120JRD
TYP MAX UNIT
5500 7400
650 910 pF
330 500
525
45
nC
310
50
160
ns
300
190
45
110
ns
600
150
7
8
mJ
15
45
110
ns
500
55
12.5
mJ
S
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol Characteristic
MIN
R_ΘJC
Junction to Case (IGBT)
Junction to Case (FRED)
R_ΘJA Junction to Ambient
W_T
Package Weight
Torque Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine)
1 _{Repetitive Rating: Pulse width limited by maximum junction temperature.}
2 _{Leakages include the FRED and IGBT.}
3 _{See MIL-STD-750 Method 3471}
4 _{Switching losses include the FRED and IGBT.}
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYP
1.03
29.2
MAX
0.24
0.66
20
10
1.1
UNIT
°C/W
oz
gm
lb•in
N•m