APT50GF120B2R Datasheet, PDF (2/3 Pages) Advanced Power Technology – The Fast IGBT is a new generation of high voltage power IGBTs.

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
C_ies
C_oes
C_res
Q_g
Q_ge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_ts
gfe
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance
V_GE = 0V
V_CE = 25V
f = 1 MHz
Total Gate Charge ³
Gate Charge
Gate-Emitter Charge
V_GE = 15V
V_CC = 0.50V_CES
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Y _{Rise Time}
R _{Turn-off Delay Time}
A _{Fall Time}
Turn-on Delay Time
IN _{Rise Time}
Turn-off Delay Time
IM _{Fall Time}
L Turn-on Switching Energy
Turn-off Switching Energy
E _{Total Switching Losses}
R _{Turn-on Delay Time}
P _{Rise Time}
I_C = I_C2
Resistive Switching (25°C)
V_GE = 15V
V_CC = 0.80V_CES
I_C = I_C2
R_G = 10Ω
Inductive Switching (150°C)
V_CLAMP(Peak) = 0.66V_CES
V_GE = 15V
I_C = I_C2
R_G = 10Ω
T_J = +150°C
Inductive Switching (25°C)
V_CLAMP(Peak) = 0.66V_CES
V_GE = 15V
Turn-off Delay Time
I_C = I_C2
Fall Time
R_G = 10Ω
Total Switching Losses
T_J = +25°C
Forward Transconductance
V_CE = 20V, I_C = I_C2
8
APT50GF120B2R/LR
TYP MAX UNIT
3450 4850
330 500 pF
230 350
330 450
30
50
nC
205 290
55
245
ns
155
275
45
75
100 150
ns
540 810
40
80
7.0
7.0
mJ
14.0
50
115
ns
480
40
12.0
mJ
S
THERMAL CHARACTERISTICS
Symbol Characteristic
R_ΘJC
R_ΘJA
Torque
Junction to Case
Junction to Ambient
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
MIN TYP MAX UNIT
0.32
40
°C/W
10
lb•in
1 _{Repetitive Rating: Pulse width limited by maximum junction temperature.}
2 _{IC = IC2, VCC = 50V, RGE = 25Ω, L = 68µH, Tj = 25°C}
3 _{See MIL-STD-750 Method 3471}
4 _{The maximum current is limited by lead temperature.}
APT Reserves the right to change, without notice, the specifications and information contained herein.