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APT5024BFLL_05 Datasheet, PDF (2/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 250V
ID = 22A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 250V
ID = 22A @ 25°C
RG = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 333V, VGS = 15V
ID = 22A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 333V VGS = 15V
ID = 22A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS
Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID 22A)
dv/dt Peak Diode Recovery dv/dt 5
Reverse Recovery Time
trr
(IS = -ID 22A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Reverse Recovery Charge
Qrr
(IS = -ID 22A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
IRRM
Peak Recovery Current
(IS = -ID 22A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
MIN
MIN
APT5024BFLL_SFLL
TYP MAX UNIT
1900
417
pF
27
43
12
nC
24
8
6
ns
18
2
167
86
µJ
262
99
TYP MAX UNIT
22 Amps
88
1.3 Volts
15 V/ns
250
ns
400
1.9
µC
6
15
Amps
26
TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.47
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 3.97mH, RG = 25Ω, Peak IL = 22A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID27A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.50
0.9
0.40
0.7
0.30
0.20
0.10
0
10-5
0.5
Note:
t1
0.3
t2
Duty Factor D = t1/t2
0.1
Peak TJ = PDM x ZθJC + TC
0.05
SINGLE PULSE
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION