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| APT5014BLL_04 Datasheet, PDF (2/5 Pages) Advanced Power Technology – POWER MOS 7 MOSFET | |||
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DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 250V
ID = 35A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 250V
ID = 35A @ 25°C
RG = 1.6â¦
INDUCTIVE SWITCHING @ 25°C
VDD = 333V, VGS = 15V
ID = 35A, RG = 5â¦
INDUCTIVE SWITCHING @ 125°C
VDD = 333V, VGS = 15V
ID = 35A, RG = 5â¦
APT5014 BLL - SLL
MIN TYP MAX UNIT
3261
704
pF
50
72
20
nC
36
11
6
23
ns
3
325
249
545
µJ
288
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -35A)
t rr
Reverse Recovery Time (IS = -35A, dlS/dt = 100A/µs)
Q rr Reverse Recovery Charge (IS = -35A, dlS/dt = 100A/µs)
dv/dt Peak Diode Recovery dv/dt 5
35
Amps
140
1.3 Volts
510
ns
10
µC
8
V/ns
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.31
°C/W
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.12mH, RG = 25â¦, Peak IL = 35A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ⤠-35A di/dt ⤠700A/µs VR ⤠500V TJ ⤠150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.30
0.9
0.25
0.7
0.20
0.5
0.15
Note:
0.10
0.05
0
10-5
0.3
t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
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