APT5010JFLL_04 Datasheet, PDF (2/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET

DYNAMIC CHARACTERISTICS
APT5010JFLL
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
C_{iss Input Capacitance}
V_GS = 0V
4360
C_oss
C_rss
Output Capacitance
Reverse Transfer Capacitance
V_DS = 25V
f = 1 MHz
895
pF
60
Q_g
Total Gate Charge ³
Q_{gs Gate-Source Charge}
Q_{gd Gate-Drain ("Miller") Charge}
V_GS = 10V
V_DD = 300V
I_D = 41A @ 25°C
95
24
nC
50
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_on
E_off
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Turn-on Switching Energy ⁶
Turn-off Switching Energy
RESISTIVE SWITCHING
11
V_GS = 15V
V_DD = 300V
I_D = 41A @ 25°C
13
ns
25
R_G = 0.6Ω
3
INDUCTIVE SWITCHING @ 25°C
V_DD = 333V, V_GS = 15V
485
I_D = 41A, R_G = 5Ω
455
µJ
INDUCTIVE SWITCHING @ 125°C
755
V_DD = 333V V_GS = 15V
I_D = 41A, R_G = 5Ω
530
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
I_S
Continuous Source Current (Body Diode)
I_SM
Pulsed Source Current ¹ (Body Diode)
V_SD Diode Forward Voltage ² (V_GS = 0V, I_S = -41A)
dv_{/dt Peak Diode Recovery} dv_/dt 5
41 _Amps
164
1.3 Volts
15 V/ns
Reverse Recovery Time
t_rr
(I_S = -41A, ^di/_dt = 100A/µs)
Reverse Recovery Charge
Q_rr
(I_S = -41A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
280
ns
600
2.28
µC
6.41
Peak Recovery Current
I_RRM
(I_S = -41A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
15.7
23.6
Amps
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_θJC
R_θJA
Junction to Case
Junction to Ambient
0.33
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T_j = +25°C, L = 1.65mH, R_G = 25Ω, Peak I_L = 41A
5 ^dv/_dt numbers reflect the limitations of the test circuit rather than the
device itself. I_S ≤ -I_D41A ^di/_dt ≤ 700A/µs V_R ≤ V_DSS T_J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.9
0.30
0.25
0.7
0.20
0.15
0.10
0.05
0
10^-5
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION