APT40M75JN Datasheet, PDF (2/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

DYNAMIC CHARACTERISTICS
Symbol
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 0.5 V_DSS
I_D = I_D [Cont.] @ 25°C
V_GS = 15V
V_DD = 0.5 V_DSS
I_D = I_D [Cont.] @ 25°C
R_G = 0.6Ω
APT40M75/40M90JN
MIN TYP MAX UNIT
5630 6800
1320 1950 _pF
510 720
241 370
34
50
nC
117 180
16
32
31
62
ns
45
70
13
26
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
I_S
Continuous Source Current
(Body Diode)
APT40M75JN
APT40M90JN
I_SM
Pulsed Source Current ¹
(Body Diode)
APT40M75JN
APT40M90JN
V_{SD Diode Forward Voltage} ² _{(VGS = 0V, IS = -ID [Cont.])}
t _rr
Reverse Recovery Time (I_S = -I_D [Cont.], dl_S/dt = 100A/µs)
Q _rr Reverse Recovery Charge (I_S = -I_D [Cont.], dl_S/dt = 100A/µs)
56
51
Amps
224
204
1.8 Volts
370 740 ns
8
16
µC
PACKAGE CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
L_D
Internal Drain Inductance (Measured From Drain Terminal to Center of Die.)
3
L_S
Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)
5
V_{Isolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) 2500}
C_{Isolation Drain-to-Mounting Base Capacitance (f = 1MHz)}
35
Torque Maximum Torque for Device Mounting Screws and Electrical Terminations.
13
1 _{Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)}
2 _{Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%}
3 _{See MIL-STD-750 Method 3471}
0.3
0.1
0.05
D=0.5
0.2
0.1
0.01
0.005
0.05
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
0.001
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
UNIT
nH
Volts
pF
in-lbs