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APT40M70JVFR Datasheet, PDF (2/4 Pages) Advanced Power Technology – POWER MOS V FREDFET
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DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg
Total Gate Charge 3
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller") Charge
td(on) Turn-on Delay Time
tr
Rise Time
td(off) Turn-off Delay Time
tf
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6Ω
APT40M70JVFR
MIN TYP MAX UNIT
7410 8890
1140 1600 pF
450 675
330 495
40
60
nC
127 190
16
32
16
32
ns
54
80
5
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN TYP MAX UNIT
53
Amps
212
1.3 Volts
15 V/ns
250
ns
500
1.6
µC
5.5
15
Amps
27
THERMAL / PACKAGE CHARACTERISTICS
Symbol Characteristic
RθJC
RθJA
VIsolation
Torque
Junction to Case
Junction to Ambient
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
MIN
2500
TYP
MAX
0.28
40
10
UNIT
°C/W
Volts
lb•in
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.78mH, RG = 25Ω, Peak IL = 53A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID53A di/dt ≤ 700A/µs VR ≤100V TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3
D=0.5
0.1
0.2
0.05
0.1
0.05
0.01
0.005
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
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