APT40M70B2VFR Datasheet, PDF (2/4 Pages) Advanced Power Technology – POWER MOS V FREDFET

DYNAMIC CHARACTERISTICS
Symbol
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 200V
I_D = 57A @ 25°C
V_GS = 15V
V_DD = 200V
I_D = 57A @ 25°C
R_G = 0.6Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
I_S
Continuous Source Current (Body Diode)
I_{SM Pulsed Source Current} 1 _{(Body Diode)}
V_SD Diode Forward Voltage ² (V_GS = 0V, I_S = -57A)
dv_{/dt Peak Diode Recovery} dv_/dt 5
Reverse Recovery Time
t_rr
(I_S = -57A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
Reverse Recovery Charge
Q_rr
(I_S = -57A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
I_RRM
Peak Recovery Current
(I_S = -57A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
APT40M70B2_LVFR(G)
MIN TYP MAX UNIT
7410 8890
1140 1600 pF
450 675
330 495
40
40
nC
125 190
16
32
16
32
ns
55
80
5
10
MIN TYP MAX UNIT
57 _Amps
228
1.3 Volts
15 V/ns
250
ns
500
1.6
µC
5.5
15
Amps
27
THERMAL CHARACTERISTICS
Symbol Characteristic
R_θJC
R_θJA
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.24
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T_j = +25°C, L = 1.54mH, R_G = 25Ω, Peak I_L = 57A
5 ^dv/_dt numbers reflect the limitations of the test circuit rather than the
device itself. I_S ≤ -I_D57A ^di/_dt ≤ 700A/µs V_R ≤400V T_J ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3
0.1
0.05
0.01
0.005
0.001
10^-5
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION